Please use this identifier to cite or link to this item: https://doi.org/10.1186/s11671-019-3179-4
Title: Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms
Authors: Yang, H.
Chen, W.
Zheng, X.
Yang, D.
Hu, Y.
Zhang, X.
Ye, X. 
Zhang, Y.
Jiang, T.
Peng, G.
Zhang, X.
Zhang, R.
Deng, C.
Qin, S.
Keywords: Bi2O2Se
Multilayer
Near-Infrared
Photodetector
Issue Date: 2019
Publisher: Springer
Citation: Yang, H., Chen, W., Zheng, X., Yang, D., Hu, Y., Zhang, X., Ye, X., Zhang, Y., Jiang, T., Peng, G., Zhang, X., Zhang, R., Deng, C., Qin, S. (2019). Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms. Nanoscale Research Letters 14 (1) : 371. ScholarBank@NUS Repository. https://doi.org/10.1186/s11671-019-3179-4
Rights: Attribution 4.0 International
Abstract: The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices. © 2019, The Author(s).
Source Title: Nanoscale Research Letters
URI: https://scholarbank.nus.edu.sg/handle/10635/210055
ISSN: 1931-7573
DOI: 10.1186/s11671-019-3179-4
Rights: Attribution 4.0 International
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