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https://doi.org/10.1109/ACCESS.2019.2958059
Title: | Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters | Authors: | Cui, M. Sun, R. Bu, Q. Liu, W. Wen, H. Li, A. Liang, Y.C. Zhao, C. |
Keywords: | GaN integration circuits (ICs) high temperature operations integrated gate drivers synchronous and asynchronous dc-dc buck converters |
Issue Date: | 2019 | Publisher: | Institute of Electrical and Electronics Engineers Inc. | Citation: | Cui, M., Sun, R., Bu, Q., Liu, W., Wen, H., Li, A., Liang, Y.C., Zhao, C. (2019). Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7 : 184375-184384. ScholarBank@NUS Repository. https://doi.org/10.1109/ACCESS.2019.2958059 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Abstract: | This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and a half-bridge power stage in a 3- $\mu \text{m}$ enhancement-mode (E-mode) GaN-on-Si process. The fabricated synchronous converter with integrated gate drivers is based on E-mode GaN MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), which have a large gate swing of 10 V due to the insertion of 20 nm high-k gate insulator Al2O3. At 100 kHz, the proposed DC-DC integrated circuits (ICs) exhibit good thermal stability at high temperatures up to 250 °C for 25 V down conversion. Furthermore, four different designs (asynchronous and synchronous) including converters with external drivers were systematically evaluated at different input voltages and duty cycles, the GaN-based DC-DC converters with integrated gate drivers exhibit small voltage overshoots and oscillations due to reduced parasitic inductance and chip size. These results validate the advantages of monolithic, lateral integration of half-bridge GaN ICs with gate drivers for high temperature power converters. © 2013 IEEE. | Source Title: | IEEE Access | URI: | https://scholarbank.nus.edu.sg/handle/10635/209632 | ISSN: | 2169-3536 | DOI: | 10.1109/ACCESS.2019.2958059 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International |
Appears in Collections: | Elements Staff Publications |
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