Please use this identifier to cite or link to this item: https://doi.org/10.1109/ACCESS.2019.2958059
Title: Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters
Authors: Cui, M.
Sun, R.
Bu, Q.
Liu, W.
Wen, H.
Li, A.
Liang, Y.C. 
Zhao, C.
Keywords: GaN integration circuits (ICs)
high temperature operations
integrated gate drivers
synchronous and asynchronous dc-dc buck converters
Issue Date: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Cui, M., Sun, R., Bu, Q., Liu, W., Wen, H., Li, A., Liang, Y.C., Zhao, C. (2019). Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7 : 184375-184384. ScholarBank@NUS Repository. https://doi.org/10.1109/ACCESS.2019.2958059
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Abstract: This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and a half-bridge power stage in a 3- $\mu \text{m}$ enhancement-mode (E-mode) GaN-on-Si process. The fabricated synchronous converter with integrated gate drivers is based on E-mode GaN MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), which have a large gate swing of 10 V due to the insertion of 20 nm high-k gate insulator Al2O3. At 100 kHz, the proposed DC-DC integrated circuits (ICs) exhibit good thermal stability at high temperatures up to 250 °C for 25 V down conversion. Furthermore, four different designs (asynchronous and synchronous) including converters with external drivers were systematically evaluated at different input voltages and duty cycles, the GaN-based DC-DC converters with integrated gate drivers exhibit small voltage overshoots and oscillations due to reduced parasitic inductance and chip size. These results validate the advantages of monolithic, lateral integration of half-bridge GaN ICs with gate drivers for high temperature power converters. © 2013 IEEE.
Source Title: IEEE Access
URI: https://scholarbank.nus.edu.sg/handle/10635/209632
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2019.2958059
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
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