Please use this identifier to cite or link to this item: https://doi.org/10.3390/mi10120848
Title: A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
Authors: Sun, Z.
Huang, H.
Sun, N.
Tao, P.
Zhao, C.
Liang, Y.C. 
Keywords: Gallium nitride
High electron mobility transistors
Normally-off operation
Vertical gate structure
Wide-bandgap semiconductor
Issue Date: 2019
Publisher: MDPI AG
Citation: Sun, Z., Huang, H., Sun, N., Tao, P., Zhao, C., Liang, Y.C. (2019). A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure. Micromachines 10 (12) : 848. ScholarBank@NUS Repository. https://doi.org/10.3390/mi10120848
Rights: Attribution 4.0 International
Abstract: A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mWcm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs. © 2019 by the authors.
Source Title: Micromachines
URI: https://scholarbank.nus.edu.sg/handle/10635/209512
ISSN: 2072-666X
DOI: 10.3390/mi10120848
Rights: Attribution 4.0 International
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