Please use this identifier to cite or link to this item: https://doi.org/10.1038/s42005-020-0336-0
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dc.titleTopoelectrical circuit realization of a Weyl semimetal heterojunction
dc.contributor.authorRafi-Ul-Islam, S.M.
dc.contributor.authorBin Siu, Z.
dc.contributor.authorJalil, M.B.A.
dc.date.accessioned2021-08-27T02:33:34Z
dc.date.available2021-08-27T02:33:34Z
dc.date.issued2020
dc.identifier.citationRafi-Ul-Islam, S.M., Bin Siu, Z., Jalil, M.B.A. (2020). Topoelectrical circuit realization of a Weyl semimetal heterojunction. Communications Physics 3 (1) : 72. ScholarBank@NUS Repository. https://doi.org/10.1038/s42005-020-0336-0
dc.identifier.issn2399-3650
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/199659
dc.description.abstractWeyl semimetals (WSMs) are a recent addition to the family of topological materials, and the physical realization of heterojunctions between different types of WSMs is challenging. Here, we use electrical components to create topoelectrical (TE) circuits for modeling and studying the transmission across heterojunctions, consisting of a Type I WSM source to a drain in the Type II or intermediary Type III WSM phase. For transport from a Type I WSM source to a Type II WSM drain, valley-independent (dependent) energy flux transmission occurs when the tilt and transmission directions are perpendicular (parallel) to each other. Furthermore, “anti-Klein” tunneling occurs between a Type I source and Type III drain where the transmission is totally suppressed for certain valleys at normal incidence. Owing to their experimental accessibility, TE circuits offer an excellent testbed for transport phenomena in WSM-based heterostructures. © 2020, The Author(s).
dc.publisherNature Research
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceScopus OA2020
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.description.doi10.1038/s42005-020-0336-0
dc.description.sourcetitleCommunications Physics
dc.description.volume3
dc.description.issue1
dc.description.page72
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