An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

Abstract

This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits. © 2013 IEEE.