Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsnano.0c04801
Title: Direct Bandgap-like Strong Photoluminescence from Twisted Multilayer MoS2 Grown on SrTiO3
Authors: Soumya Sarkar 
Sinu Mathew 
Sandhya Chintalapati 
Ashutosh Rath 
Majid Panahandeh-Fard 
Surajit Saha 
Sreetosh Goswami 
Sherman Jun Rong Tan
Kian Ping Loh 
Mary Scott
Thirumalai Venkatesan 
Keywords: 2D materials
photoluminescence
interlayer twist
transition metal dichalcogenides
transition metal oxides
Issue Date: 7-Dec-2020
Publisher: American Chemical Society
Citation: Soumya Sarkar, Sinu Mathew, Sandhya Chintalapati, Ashutosh Rath, Majid Panahandeh-Fard, Surajit Saha, Sreetosh Goswami, Sherman Jun Rong Tan, Kian Ping Loh, Mary Scott, Thirumalai Venkatesan (2020-12-07). Direct Bandgap-like Strong Photoluminescence from Twisted Multilayer MoS2 Grown on SrTiO3. ACS Nano 14 (12) : 16761 - 16769. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.0c04801
Abstract: While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light–matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon emission quantum yield. We report strong direct bandgap-like photoluminescence at ∼1.9 eV from multilayer MoS2 grown on SrTiO3, whose intensity is significantly higher than that observed in multilayer MoS2/SiO2. Using high-resolution electron microscopy we observe interlayer twist and >8% increase in the van der Waals gap, which leads to weaker interlayer coupling. This affects the evolution of the band structure in multilayer MoS2 as probed by transient absorption spectroscopy, causing higher photo carrier recombination at the direct gap. Our results provide a platform that could enable multilayer TMDs for robust optical device applications.
Source Title: ACS Nano
URI: https://scholarbank.nus.edu.sg/handle/10635/189221
ISSN: 1936086X
DOI: 10.1021/acsnano.0c04801
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