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Title: A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
Authors: Feng, Zexin
Qin, Peixin
Yang, Yali
Yan, Han 
Guo, Huixin
Wang, Xiaoning 
Zhou, Xiaorong
Han, Yuyan
Yi, Jiabao 
Qi, Dongchen 
Yu, Xiaojiang 
Breese, Mark BH 
Zhang, Xin 
Wu, Haojiang
Chen, Hongyu
Xiang, Hongjun
Jiang, Chengbao
Liu, Zhiqi 
Issue Date: 1-Feb-2021
Publisher: Elsevier BV
Citation: Feng, Zexin, Qin, Peixin, Yang, Yali, Yan, Han, Guo, Huixin, Wang, Xiaoning, Zhou, Xiaorong, Han, Yuyan, Yi, Jiabao, Qi, Dongchen, Yu, Xiaojiang, Breese, Mark BH, Zhang, Xin, Wu, Haojiang, Chen, Hongyu, Xiang, Hongjun, Jiang, Chengbao, Liu, Zhiqi (2021-02-01). A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity. Acta Materialia 204 : 116516-116516. ScholarBank@NUS Repository.
Abstract: The coupling of optical and electronic degrees of freedom together with quantum confinement in lowdimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide – BaSnO3 upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of ~7.72 × 1014 cm−2 and a high room-temperature mobility of ~18 cm2·V−1·s−1. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of ~350% (more than 540 k/) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.
Source Title: Acta Materialia
ISSN: 13596454
DOI: 10.1016/j.actamat.2020.116516
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