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|Title:||Growth and p-doping of zinc oxide nanostructures and films in aqueous solution||Authors:||TAY CHUAN BENG||Keywords:||Zinc Oxide, Nanorods, Film, Defects, Doping, Aqueous Solution Growth||Issue Date:||17-Dec-2009||Citation:||TAY CHUAN BENG (2009-12-17). Growth and p-doping of zinc oxide nanostructures and films in aqueous solution. ScholarBank@NUS Repository.||Abstract:||ZnO is a wide bandgap material with a large exciton binding energy (60 meV) and highly polar surfaces which promote anisotropic growth of many interesting nanostructures. Due to its multifunctional properties, ZnO has been proposed for a wide variety of applications including optoelectronics. This work studies the growth of ZnO nanorods and films in aqueous solution using zinc acetate and ammonium hydroxide. The factors controlling the growth of ZnO on lattice-matched and non-lattice-matched substrates were studied and identified. Using photoluminescence and Raman spectroscopy, the native defects were identified and associated with the growth conditions. Based on this understanding of the growth drivers and defects, a new growth strategy for growing film in aqueous solution was proposed and demonstrated. With potassium as a p-type dopant for films, p-type conductivity was investigated and confirmed using Hall effect, SIMS and XPS measurements. An optimum hole concentration of 3.8 x 1017 cm-3 is obtained at 0.07 M KAc without any applied bias and 3.98 x 1017 cm-3 when -0.4 V is applied. Finally, a p-ZnO / n-GaN junction is fabricated with a rectifying I-V characteristic with a UV and weak orange electroluminescence.||URI:||http://scholarbank.nus.edu.sg/handle/10635/18437|
|Appears in Collections:||Ph.D Theses (Open)|
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