Please use this identifier to cite or link to this item:
https://doi.org/10.1021/acs.nanolett.5b00160
Title: | Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures | Authors: | Bradley, A.J Ugeda, M.M Da Jornada, F.H Qiu, D.Y Ruan, W Zhang, Y Wickenburg, S Riss, A Lu, J Mo, S.-K Hussain, Z Shen, Z.-X Louie, S.G Crommie, M.F |
Keywords: | Coulomb interactions Electron-electron interactions Electronic properties Electronic structure Energy gap Materials properties Scanning tunneling microscopy Screening Transition metals Van der Waals forces Wave functions Electronic wave functions Interlayer coupling Quasi particles Scanning tunneling microscopy/spectroscopy STM/STS Theoretical study Transition metal dichalcogenides Two Dimensional (2 D) Graphene chalcogen metal nanoparticle molybdenum selenium chemistry electron transport genetic procedures materials testing procedures static electricity ultrastructure Chalcogens Electron Transport Materials Testing Metal Nanoparticles Molecular Probe Techniques Molybdenum Selenium Static Electricity |
Issue Date: | 2015 | Publisher: | American Chemical Society | Citation: | Bradley, A.J, Ugeda, M.M, Da Jornada, F.H, Qiu, D.Y, Ruan, W, Zhang, Y, Wickenburg, S, Riss, A, Lu, J, Mo, S.-K, Hussain, Z, Shen, Z.-X, Louie, S.G, Crommie, M.F (2015). Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures. Nano Letters 15 (4) : 2594-2599. ScholarBank@NUS Repository. https://doi.org/10.1021/acs.nanolett.5b00160 | Rights: | Attribution 4.0 International | Abstract: | Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices. (Graph Presented). © 2015 American Chemical Society. | Source Title: | Nano Letters | URI: | https://scholarbank.nus.edu.sg/handle/10635/183884 | ISSN: | 1530-6984 | DOI: | 10.1021/acs.nanolett.5b00160 | Rights: | Attribution 4.0 International |
Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
10_1021_acs_nanolett_5b00160.pdf | 3.53 MB | Adobe PDF | OPEN | None | View/Download |
This item is licensed under a Creative Commons License