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https://doi.org/10.1149/2.0131711jss
DC Field | Value | |
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dc.title | Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures | |
dc.contributor.author | Chang, T.-F | |
dc.contributor.author | Chang, C.-Y | |
dc.contributor.author | Huang, C.-F | |
dc.contributor.author | Liang, Y.C | |
dc.contributor.author | Samudra, G.S | |
dc.contributor.author | Lin, R.-M | |
dc.date.accessioned | 2020-11-17T06:36:43Z | |
dc.date.available | 2020-11-17T06:36:43Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M (2017). Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures. ECS Journal of Solid State Science and Technology 6 (11) : S3052-S3055. ScholarBank@NUS Repository. https://doi.org/10.1149/2.0131711jss | |
dc.identifier.issn | 2162-8769 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/183553 | |
dc.description.abstract | In this paper, AlGaN/GaN Schottky gate HEMTs on silicon based on vertical interconnect structures were fabricated and analyzed. The device with a vertical drain interconnect to the substrate shows worse current collapse based on drain lag measurement compared with both the conventional lateral device without vertical interconnect and the device with a vertical source interconnect to the substrate, implying that electrons are trapped in the epilayer due to existence of a vertical electric field. The trapped electrons in the epi and buffer layers introduce a positive shift in the threshold voltage by about 1.5 V together with an increase in the specific on-resistance, but show nearly no effect on the turn-on voltage of the Schottky junction. © The Author(s) 2017. | |
dc.publisher | Electrochemical Society | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.source | Unpaywall 20201031 | |
dc.type | Editorial | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/2.0131711jss | |
dc.description.sourcetitle | ECS Journal of Solid State Science and Technology | |
dc.description.volume | 6 | |
dc.description.issue | 11 | |
dc.description.page | S3052-S3055 | |
dc.published.state | Published | |
Appears in Collections: | Elements Staff Publications |
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