Please use this identifier to cite or link to this item: https://doi.org/10.1186/1556-276X-8-289
Title: Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering
Authors: Basu, T 
Datta, D.P
Som, T
Keywords: Argon
Atomic force microscopy
Coarsening
Ion beams
Ostwald ripening
Silicon
Sputtering
Surface roughness
Topography
Angles of incidence
Faceted structures
Ion beam patterning
Mechanism-based
Parallel mode
Shadowing effects
Sputtering yields
Temporal evolution
Ion bombardment
Issue Date: 2013
Citation: Basu, T, Datta, D.P, Som, T (2013). Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: Understanding the role of shadowing and sputtering. Nanoscale Research Letters 8 (1) : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-8-289
Rights: Attribution 4.0 International
Abstract: In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2. Facet coarsening takes place at further higher fluences. This transition from ripples to faceted structures is attributed to the shadowing effect due to a height difference between peaks and valleys of the ripples. The observed facet coarsening is attributed to a mechanism based on reflection of primary ions from the facets. In addition, the role of sputtering is investigated (for both the angles) by computing the fractional change in sputtering yield and the evolution of surface roughness. © 2013 Basu et al.
Source Title: Nanoscale Research Letters
URI: https://scholarbank.nus.edu.sg/handle/10635/183217
ISSN: 19317573
DOI: 10.1186/1556-276X-8-289
Rights: Attribution 4.0 International
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