Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4804541
Title: Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca 0.33MnO3/NdGaO3(001) films
Authors: Wang, L.F
Tan, X.L
Chen, P.F 
Zhi, B.W
Chen, B.B
Huang, Z 
Gao, G.Y
Wu, W.B
Keywords: Anisotropic strain
Annealing parameters
Antiferromagnetics
Epitaxial quality
Orthorhombic lattices
Oxide heterostructures
Oxygen atmosphere
Phase instability
Annealing
Antiferromagnetism
Calcium
Epitaxial growth
Ground state
Manganese oxide
Phase separation
Epitaxial films
Issue Date: 2013
Citation: Wang, L.F, Tan, X.L, Chen, P.F, Zhi, B.W, Chen, B.B, Huang, Z, Gao, G.Y, Wu, W.B (2013). Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca 0.33MnO3/NdGaO3(001) films. AIP Advances 3 (5) : 52106. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4804541
Rights: Attribution 4.0 International
Abstract: Bulk La0.67Ca0.33MnO3 (LCMO) and NdGaO3 (NGO) have the same Pbnm symmetry but different orthorhombic lattice distortions, yielding an anisotropic strain state in the LCMO epitaxial film grown on the NGO(001) substrate. The films are optimally doped in a ferromagnetic-metal ground state, after being ex-situ annealed in oxygen atmosphere, however, they show strikingly an antiferromagnetic-insulating (AFI) transition near 250 K, leading to a phase separation state with tunable phase instability at the temperatures below. To explain this drastic strain effect, the films with various thicknesses were ex-situ annealed under various annealing parameters. We demonstrate that the ex-situ annealing can surprisingly improve the epitaxial quality, resulting in the films with true substrate coherency and the AFI ground state. And the close linkage between the film morphology and electronic phase evolution implies that the strain-mediated octahedral deformation and rotation could be assisted by ex-situ annealing, and moreover, play a key role in controlling the properties of oxide heterostructures. © 2013 © 2013 Author(s).
Source Title: AIP Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/183202
ISSN: 21583226
DOI: 10.1063/1.4804541
Rights: Attribution 4.0 International
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