Please use this identifier to cite or link to this item:
https://doi.org/10.1038/srep28458
DC Field | Value | |
---|---|---|
dc.title | Piezo Voltage Controlled Planar Hall Effect Devices | |
dc.contributor.author | Zhang, B | |
dc.contributor.author | Meng, K.-K | |
dc.contributor.author | Yang, M.-Y | |
dc.contributor.author | Edmonds, K.W | |
dc.contributor.author | Zhang, H | |
dc.contributor.author | Cai, K.-M | |
dc.contributor.author | Sheng, Y | |
dc.contributor.author | Zhang, N | |
dc.contributor.author | Ji, Y | |
dc.contributor.author | Zhao, J.-H | |
dc.contributor.author | Zheng, H.-Z | |
dc.contributor.author | Wang, K.-Y | |
dc.date.accessioned | 2020-10-31T11:32:02Z | |
dc.date.available | 2020-10-31T11:32:02Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Zhang, B, Meng, K.-K, Yang, M.-Y, Edmonds, K.W, Zhang, H, Cai, K.-M, Sheng, Y, Zhang, N, Ji, Y, Zhao, J.-H, Zheng, H.-Z, Wang, K.-Y (2016). Piezo Voltage Controlled Planar Hall Effect Devices. Scientific Reports 6 : 28458. ScholarBank@NUS Repository. https://doi.org/10.1038/srep28458 | |
dc.identifier.issn | 2045-2322 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/182458 | |
dc.description.abstract | The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co 2 FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co 2 FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. | |
dc.publisher | Nature Publishing Group | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.source | Unpaywall 20201031 | |
dc.subject | information storage | |
dc.subject | magnetic field | |
dc.subject | room temperature | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1038/srep28458 | |
dc.description.sourcetitle | Scientific Reports | |
dc.description.volume | 6 | |
dc.description.page | 28458 | |
dc.published.state | published | |
Appears in Collections: | Elements Staff Publications |
Show simple item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
10_1038_srep28458.pdf | 2.88 MB | Adobe PDF | OPEN | None | View/Download |
This item is licensed under a Creative Commons License