Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep28458
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dc.titlePiezo Voltage Controlled Planar Hall Effect Devices
dc.contributor.authorZhang, B
dc.contributor.authorMeng, K.-K
dc.contributor.authorYang, M.-Y
dc.contributor.authorEdmonds, K.W
dc.contributor.authorZhang, H
dc.contributor.authorCai, K.-M
dc.contributor.authorSheng, Y
dc.contributor.authorZhang, N
dc.contributor.authorJi, Y
dc.contributor.authorZhao, J.-H
dc.contributor.authorZheng, H.-Z
dc.contributor.authorWang, K.-Y
dc.date.accessioned2020-10-31T11:32:02Z
dc.date.available2020-10-31T11:32:02Z
dc.date.issued2016
dc.identifier.citationZhang, B, Meng, K.-K, Yang, M.-Y, Edmonds, K.W, Zhang, H, Cai, K.-M, Sheng, Y, Zhang, N, Ji, Y, Zhao, J.-H, Zheng, H.-Z, Wang, K.-Y (2016). Piezo Voltage Controlled Planar Hall Effect Devices. Scientific Reports 6 : 28458. ScholarBank@NUS Repository. https://doi.org/10.1038/srep28458
dc.identifier.issn2045-2322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/182458
dc.description.abstractThe electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co 2 FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co 2 FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectinformation storage
dc.subjectmagnetic field
dc.subjectroom temperature
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1038/srep28458
dc.description.sourcetitleScientific Reports
dc.description.volume6
dc.description.page28458
dc.published.statepublished
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