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Title: Piezo Voltage Controlled Planar Hall Effect Devices
Authors: Zhang, B
Meng, K.-K
Yang, M.-Y
Edmonds, K.W
Zhang, H
Cai, K.-M 
Sheng, Y
Zhang, N
Ji, Y
Zhao, J.-H
Zheng, H.-Z
Wang, K.-Y
Keywords: information storage
magnetic field
room temperature
Issue Date: 2016
Publisher: Nature Publishing Group
Citation: Zhang, B, Meng, K.-K, Yang, M.-Y, Edmonds, K.W, Zhang, H, Cai, K.-M, Sheng, Y, Zhang, N, Ji, Y, Zhao, J.-H, Zheng, H.-Z, Wang, K.-Y (2016). Piezo Voltage Controlled Planar Hall Effect Devices. Scientific Reports 6 : 28458. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co 2 FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co 2 FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
Source Title: Scientific Reports
ISSN: 2045-2322
DOI: 10.1038/srep28458
Rights: Attribution 4.0 International
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