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https://doi.org/10.1038/srep28458
Title: | Piezo Voltage Controlled Planar Hall Effect Devices | Authors: | Zhang, B Meng, K.-K Yang, M.-Y Edmonds, K.W Zhang, H Cai, K.-M Sheng, Y Zhang, N Ji, Y Zhao, J.-H Zheng, H.-Z Wang, K.-Y |
Keywords: | information storage magnetic field room temperature |
Issue Date: | 2016 | Publisher: | Nature Publishing Group | Citation: | Zhang, B, Meng, K.-K, Yang, M.-Y, Edmonds, K.W, Zhang, H, Cai, K.-M, Sheng, Y, Zhang, N, Ji, Y, Zhao, J.-H, Zheng, H.-Z, Wang, K.-Y (2016). Piezo Voltage Controlled Planar Hall Effect Devices. Scientific Reports 6 : 28458. ScholarBank@NUS Repository. https://doi.org/10.1038/srep28458 | Rights: | Attribution 4.0 International | Abstract: | The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co 2 FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co 2 FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. | Source Title: | Scientific Reports | URI: | https://scholarbank.nus.edu.sg/handle/10635/182458 | ISSN: | 2045-2322 | DOI: | 10.1038/srep28458 | Rights: | Attribution 4.0 International |
Appears in Collections: | Elements Staff Publications |
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