Please use this identifier to cite or link to this item: https://doi.org/10.1155/2013/730952
Title: Growth of carbon nanotubes on carbon/cobalt films with different sp 2/sp3 ratios
Authors: Xu, N
Tsang, S.H
Tay, B.K
Teo, E.H.T
Ng, C.M 
Keywords: Barrier layers
Conductive carbon
Electrical measurement
Electronic application
Film resistivity
Filtered Cathodic Vacuum Arc techniques
High temperature
Visible Raman Spectroscopy
Carbon nanotubes
Cobalt compounds
Composite films
Scanning electron microscopy
Transmission electron microscopy
Cobalt
Issue Date: 2013
Citation: Xu, N, Tsang, S.H, Tay, B.K, Teo, E.H.T, Ng, C.M (2013). Growth of carbon nanotubes on carbon/cobalt films with different sp 2/sp3 ratios. Journal of Nanomaterials 2013 : 730952. ScholarBank@NUS Repository. https://doi.org/10.1155/2013/730952
Rights: Attribution 4.0 International
Abstract: The need of barrier layer such as SiOfor carbon nanotubes (CNTs) growth limits their performance in electronic applications. In this study, conductive carbon/metal (carbon/cobalt - C:Co) composite films with the same metal content, but different sp2/sp3 ratios, were deposited using dual-source filtered cathodic vacuum arc (FCVA) technique. Three different C:Co composite films were deposited at different temperatures; visible Raman spectroscopy indicates that the sp2-rich C:Co composite film forms at high temperature (500°C), and high-resolution transmission electron microscopy (HRTEM) shows the formation of conducting graphitic-like sp 2 clusters and with Co nanoclusters embedded within them. Electrical measurement shows a significant decrease in film resistivity as sp 2/sp3 ratio increases. CNTs were successfully grown on the composite films by plasma-enhanced vapor deposition (PECVD) approach. Scanning electron microscopy (SEM) shows minor effect on the density of CNTs by varying the sp2/sp3 ratio. The dependence of defect level of the as-grown CNTs is found to reduce as sp2/sp3 ratio increases. © 2013 Naiyun Xu et al.
Source Title: Journal of Nanomaterials
URI: https://scholarbank.nus.edu.sg/handle/10635/181808
ISSN: 16874110
DOI: 10.1155/2013/730952
Rights: Attribution 4.0 International
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