Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/180009
| DC Field | Value | |
|---|---|---|
| dc.title | DEGRADATION AND ANNEALING OF ELECTRICALLY-STRESSED THIN OXIDE IN MOS DEVICES | |
| dc.contributor.author | NG WEE THONG | |
| dc.date.accessioned | 2020-10-26T06:31:53Z | |
| dc.date.available | 2020-10-26T06:31:53Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | NG WEE THONG (1999). DEGRADATION AND ANNEALING OF ELECTRICALLY-STRESSED THIN OXIDE IN MOS DEVICES. ScholarBank@NUS Repository. | |
| dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/180009 | |
| dc.source | CCK BATCHLOAD 20201023 | |
| dc.type | Thesis | |
| dc.contributor.department | ELECTRICAL ENGINEERING | |
| dc.contributor.supervisor | C.H. LING | |
| dc.description.degree | Master's | |
| dc.description.degreeconferred | MASTER OF ENGINEERING | |
| Appears in Collections: | Master's Theses (Restricted) | |
Show simple item record
Files in This Item:
| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| b21606006.pdf | 4.9 MB | Adobe PDF | RESTRICTED | None | Log In |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.