Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep38356
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dc.titleQuantum State Transmission in a Superconducting Charge Qubit-Atom Hybrid
dc.contributor.authorYu, D
dc.contributor.authorValado, M.M
dc.contributor.authorHufnagel, C
dc.contributor.authorKwek, L.C
dc.contributor.authorAmico, L
dc.contributor.authorDumke, R
dc.date.accessioned2020-10-26T03:04:48Z
dc.date.available2020-10-26T03:04:48Z
dc.date.issued2016
dc.identifier.citationYu, D, Valado, M.M, Hufnagel, C, Kwek, L.C, Amico, L, Dumke, R (2016). Quantum State Transmission in a Superconducting Charge Qubit-Atom Hybrid. Scientific Reports 6 : 38356. ScholarBank@NUS Repository. https://doi.org/10.1038/srep38356
dc.identifier.issn2045-2322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/179779
dc.description.abstractHybrids consisting of macroscopic superconducting circuits and microscopic components, such as atoms and spins, have the potential of transmitting an arbitrary state between different quantum species, leading to the prospective of high-speed operation and long-time storage of quantum information. Here we propose a novel hybrid structure, where a neutral-atom qubit directly interfaces with a superconducting charge qubit, to implement the qubit-state transmission. The highly-excited Rydberg atom located inside the gate capacitor strongly affects the behavior of Cooper pairs in the box while the atom in the ground state hardly interferes with the superconducting device. In addition, the DC Stark shift of the atomic states significantly depends on the charge-qubit states. By means of the standard spectroscopic techniques and sweeping the gate voltage bias, we show how to transfer an arbitrary quantum state from the superconducting device to the atom and vice versa. © 2016 The Author(s).
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.typeArticle
dc.contributor.departmentCENTRE FOR QUANTUM TECHNOLOGIES
dc.description.doi10.1038/srep38356
dc.description.sourcetitleScientific Reports
dc.description.volume6
dc.description.page38356
dc.published.statepublished
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