Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep31317
Title: Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb
Authors: Chen, S.-P
Huang, Z.-Q
Crisostomo, C.P
Hsu, C.-H
Chuang, F.-C
Lin, H 
Bansil, A 
Issue Date: 2016
Citation: Chen, S.-P, Huang, Z.-Q, Crisostomo, C.P, Hsu, C.-H, Chuang, F.-C, Lin, H, Bansil, A (2016). Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. Scientific Reports 6 : 31317. ScholarBank@NUS Repository. https://doi.org/10.1038/srep31317
Rights: Attribution 4.0 International
Abstract: Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. Our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect. © The Author(s) 2016.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/178878
ISSN: 20452322
DOI: 10.1038/srep31317
Rights: Attribution 4.0 International
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_1038_srep31317.pdf3.85 MBAdobe PDF

OPEN

NoneView/Download

SCOPUSTM   
Citations

10
checked on Mar 3, 2021

Page view(s)

30
checked on Mar 4, 2021

Google ScholarTM

Check

Altmetric


This item is licensed under a Creative Commons License Creative Commons