Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41598-018-21138-x
Title: Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
Authors: Ranjan, A
Raghavan, N
O'shea, S.J
Mei, S
Bosman, M 
Shubhakar, K
Pey, K.L
Issue Date: 2018
Citation: Ranjan, A, Raghavan, N, O'shea, S.J, Mei, S, Bosman, M, Shubhakar, K, Pey, K.L (2018). Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films. Scientific Reports 8 (1) : 2854. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-018-21138-x
Rights: Attribution 4.0 International
Abstract: This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar and threshold resistive switching is observed consistently on multi-layer h-BN/Cu stacks in the low power regime with current compliance (I comp ) of less than 100 nA. Standard random telegraph noise signatures were observed in the low resistance state (LRS), similar to the trends in oxygen vacancy-based RRAM devices. While h-BN appears to be a good candidate in terms of switching performance and endurance, it performs poorly in terms of retention lifetime due to the self-recovery of LRS state (similar to recovery of soft breakdown in oxide-based dielectrics) that is consistently observed at all locations without requiring any change in the voltage polarity for I comp ~1-100 nA. © 2018 The Author(s).
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/177826
ISSN: 20452322
DOI: 10.1038/s41598-018-21138-x
Rights: Attribution 4.0 International
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