Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsami.9b11934
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dc.titleSelective Wet Etching of Silicon Germanium in Composite Vertical Nanowires
dc.contributor.authorZHASLAN BARAISSOV
dc.contributor.authorAntoine Pacco
dc.contributor.authorSIDDARDHA KONETI
dc.contributor.authorGEETA BISHT
dc.contributor.authorFederico Panciera
dc.contributor.authorFrank Holsteyns
dc.contributor.authorUTKUR MIRZIYODOVICH MIRSAIDOV
dc.date.accessioned2020-10-16T08:13:35Z
dc.date.available2020-10-16T08:13:35Z
dc.date.issued2019-09-16
dc.identifier.citationZHASLAN BARAISSOV, Antoine Pacco, SIDDARDHA KONETI, GEETA BISHT, Federico Panciera, Frank Holsteyns, UTKUR MIRZIYODOVICH MIRSAIDOV (2019-09-16). Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires. ACS Applied Materials And Interfaces 11 : 36839−36846. ScholarBank@NUS Repository. https://doi.org/10.1021/acsami.9b11934
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/177661
dc.description.abstractSilicon germanium (SixGe1–x or SiGe) is an important semiconductor material for the fabrication of nanowire-based gate-all-around transistors in the next-generation logic and memory devices. During the fabrication process, SiGe can be used either as a sacrificial layer to form suspended horizontal Si nanowires or, because of its higher carrier mobility, as a possible channel material that replaces Si in both horizontal and vertical nanowires. In both cases, there is a pressing need to understand and develop nanoscale etching processes that enable controlled and selective removal of SiGe with respect to Si. Here, we developed and tested solution-based selective etching processes for SiGe in composite (SiNx/Si0.75Ge0.25/Si) vertical nanowires. The etching solutions were formed by mixing acetic acid (CH3COOH), hydrogen peroxide (H2O2), and hydrofluoric acid (HF). Here, CH3COOH and H2O2 react to form highly oxidizing peracetic acid (PAA or CH3 CO3H). The hydrofluoric acid serves both as a catalyst for PAA formation and as an etchant for oxidized SiGe. Our study shows that an increase in any of the two oxidizer (H2O2 and PAA) concentrations increases the etch rate, and the fastest etch rate of SiGe is associated with the highest PAA concentration. Moreover, using in situ liquid-phase TEM imaging, we tested the stability of nanowires during wet etching and identified the SiGe/Si interface to be the weakest plane; we found that once the diameter of the 160-nm-tall Si0.75Ge0.25 nanowire reaches ∼15 nm during the etching, the nanowire breaks at or very close to this interface. Our study provides important insight into the details of the nanoscale wet etching of SiGe and some of the associated failure modes that are becoming extremely relevant for the fabrication processes as the size of the transistors shrink with every new device generation.
dc.language.isoen
dc.publisherACS Applied Materials And Interfaces
dc.rightsCC0 1.0 Universal
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/
dc.subjectEtching,Interfaces,Nanowires,Transmission electron microscopy,Manufacturing
dc.typeArticle
dc.contributor.departmentCENTRE FOR ADVANCED 2D MATERIALS
dc.contributor.departmentDEPT OF BIOLOGICAL SCIENCES
dc.contributor.departmentDEPT OF MATERIALS SCIENCE & ENGINEERING
dc.contributor.departmentDEPT OF PHYSICS
dc.description.doi10.1021/acsami.9b11934
dc.description.sourcetitleACS Applied Materials And Interfaces
dc.description.volume11
dc.description.page36839−36846
dc.published.statePublished
dc.grant.id(NRFCRP16-2015-05
dc.grant.fundingagencyNational Research Foundation
dc.relation.datasetDOI: 10.1021/acsami.9b11934
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