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Title: Phase Selection in Self-catalyzed GaAs Nanowires
Authors: Federico Panciera
Gilles Patriarche
Vladimir G. Dubrovskii
Frank Glas
Laurent Travers
Jean-Christophe Harmand
Keywords: Crystals,Contact angle,Liquids,Fluxes,Phase transitions
Issue Date: 2020
Publisher: American Chemical Society
Citation: Federico Panciera, ZHASLAN BARAISSOV, Gilles Patriarche, Vladimir G. Dubrovskii, Frank Glas, Laurent Travers, UTKUR MIRZIYODOVICH MIRSAIDOV, Jean-Christophe Harmand (2020). Phase Selection in Self-catalyzed GaAs Nanowires. Nano Letters 20 : 1669−1675. ScholarBank@NUS Repository.
Rights: CC0 1.0 Universal
Related Datasets: DOI: 10.1021/acs.nanolett.9b04808
Abstract: Crystal phase switching between the zincblende and wurtzite structures in III–V nanowires is crucial from the fundamental viewpoint as well as for electronic and photonic applications of crystal phase heterostructures. Here, the results of in situ monitoring of self-catalyzed vapor–liquid–solid growth of GaAs nanowires by molecular beam epitaxy inside a transmission electron microscope are presented. It is demonstrated that the occurrence of the zincblende or wurtzite phase in self-catalyzed nanowires is determined by the sole parameter, the droplet contact angle, which can be finely tuned by changing the group III and V fluxes. The zincblende phase forms at small (<100°) and large (>125°) contact angles, whereas pure wurtzite phase is observed for intermediate contact angles. Wurtzite nanowires are restricted by vertical sidewalls, whereas zincblende nanowires taper or develop the truncated edge at their top. These findings are explained within a dedicated model for the surface energetics. These results give a clear route for the crystal phase control in Au-free III–V nanowires. On a more general note, in situ growth monitoring with atomic resolution and at the technological-relevant growth rates is shown to be a powerful tool for the fine-tuning of material properties at the nanoscale.
Source Title: Nano Letters
ISSN: 15306984
DOI: 10.1021/acs.nanolett.9b04808
Rights: CC0 1.0 Universal
Appears in Collections:Staff Publications

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