Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/177391
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dc.titleWaveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications
dc.contributor.authorHuang, Li
dc.contributor.authorDong, Bowei
dc.contributor.authorGuo, Xin
dc.contributor.authorChang, Yuhua
dc.contributor.authorChen, Nan
dc.contributor.authorHuang, Xin
dc.contributor.authorLiao, Wugang
dc.contributor.authorZhu, Chunxiang
dc.contributor.authorWang, Hong
dc.contributor.authorLee, Chengkuo
dc.contributor.authorAng, Kah-Wee
dc.date.accessioned2020-10-13T01:23:35Z
dc.date.available2020-10-13T01:23:35Z
dc.date.issued2019-01-01
dc.identifier.citationHuang, Li, Dong, Bowei, Guo, Xin, Chang, Yuhua, Chen, Nan, Huang, Xin, Liao, Wugang, Zhu, Chunxiang, Wang, Hong, Lee, Chengkuo, Ang, Kah-Wee (2019-01-01). Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications. ACS NANO 13 (1) : 913-921. ScholarBank@NUS Repository.
dc.identifier.issn19360851
dc.identifier.issn1936086X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/177391
dc.description.abstract© 2018 American Chemical Society. Midinfrared (MIR), which covers numerous molecular vibrational fingerprints, has attracted enormous research interest due to its promising potential for label-free and damage-free sensing. Despite intense development efforts, the realization of waveguide-integrated on-chip sensing system has seen very limited success to date. The huge lattice mismatch between silicon and the commonly used detection materials such as HgCdTe, III-V, or II-VI compounds has been the key bottleneck that hinders their integration. Here, we realize an integration of silicon-on-insulator (SOI) waveguides with black phosphorus (BP) photodetectors. When operating near BP's cutoff wavelength where absorption is weak, the light-BP interaction is enhanced by exploiting the optical confinement in the Si waveguide and grating structure to overcome the limitation of absorption length constrained by the BP thickness. Devices with different BP crystal orientation and thickness are compared in terms of their responsivity and noise equivalent power (NEP). Spectral photoresponse from 3.68 to 4.03 μm was investigated. Additionally, power-dependent responsivity and gate-tunable photocurrent were also studied. At a bias of 1 V, the BP photodetector achieved a responsivity of 23 A/W at 3.68 μm and 2 A/W at 4 μm and a NEP less than 1 nW/Hz 1/2 at room temperature. The integration of passive Si photonics and active BP photodetector is envisaged to offer a potential pathway toward the realization of integrated on-chip systems for MIR sensing applications.
dc.language.isoen
dc.publisherAMERICAN CHEMICAL SOCIETY
dc.sourceElements
dc.subjectScience & Technology
dc.subjectPhysical Sciences
dc.subjectTechnology
dc.subjectChemistry, Multidisciplinary
dc.subjectChemistry, Physical
dc.subjectNanoscience & Nanotechnology
dc.subjectMaterials Science, Multidisciplinary
dc.subjectChemistry
dc.subjectScience & Technology - Other Topics
dc.subjectMaterials Science
dc.subjectMid-infrared
dc.subjectPhotodetector
dc.subjectBlack phosphorus
dc.subjectIntegration
dc.subjectSILICON PHOTONICS
dc.subjectPHOTODIODES
dc.subjectRESPONSIVITY
dc.typeArticle
dc.date.updated2020-10-12T17:01:33Z
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentDEPT OF INFORMATION SYSTEMS & ANALYTICS
dc.description.sourcetitleACS NANO
dc.description.volume13
dc.description.issue1
dc.description.page913-921
dc.published.statePublished
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