Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/177391
Title: Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications
Authors: Huang, Li 
Dong, Bowei 
Guo, Xin 
Chang, Yuhua 
Chen, Nan 
Huang, Xin 
Liao, Wugang 
Zhu, Chunxiang 
Wang, Hong
Lee, Chengkuo 
Ang, Kah-Wee 
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Chemistry
Science & Technology - Other Topics
Materials Science
Mid-infrared
Photodetector
Black phosphorus
Integration
SILICON PHOTONICS
PHOTODIODES
RESPONSIVITY
Issue Date: 1-Jan-2019
Publisher: AMERICAN CHEMICAL SOCIETY
Citation: Huang, Li, Dong, Bowei, Guo, Xin, Chang, Yuhua, Chen, Nan, Huang, Xin, Liao, Wugang, Zhu, Chunxiang, Wang, Hong, Lee, Chengkuo, Ang, Kah-Wee (2019-01-01). Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications. ACS NANO 13 (1) : 913-921. ScholarBank@NUS Repository.
Abstract: © 2018 American Chemical Society. Midinfrared (MIR), which covers numerous molecular vibrational fingerprints, has attracted enormous research interest due to its promising potential for label-free and damage-free sensing. Despite intense development efforts, the realization of waveguide-integrated on-chip sensing system has seen very limited success to date. The huge lattice mismatch between silicon and the commonly used detection materials such as HgCdTe, III-V, or II-VI compounds has been the key bottleneck that hinders their integration. Here, we realize an integration of silicon-on-insulator (SOI) waveguides with black phosphorus (BP) photodetectors. When operating near BP's cutoff wavelength where absorption is weak, the light-BP interaction is enhanced by exploiting the optical confinement in the Si waveguide and grating structure to overcome the limitation of absorption length constrained by the BP thickness. Devices with different BP crystal orientation and thickness are compared in terms of their responsivity and noise equivalent power (NEP). Spectral photoresponse from 3.68 to 4.03 μm was investigated. Additionally, power-dependent responsivity and gate-tunable photocurrent were also studied. At a bias of 1 V, the BP photodetector achieved a responsivity of 23 A/W at 3.68 μm and 2 A/W at 4 μm and a NEP less than 1 nW/Hz 1/2 at room temperature. The integration of passive Si photonics and active BP photodetector is envisaged to offer a potential pathway toward the realization of integrated on-chip systems for MIR sensing applications.
Source Title: ACS NANO
URI: https://scholarbank.nus.edu.sg/handle/10635/177391
ISSN: 19360851
1936086X
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