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|Title:||H-ATOM INTERACTION AND ELECTRONIC PROPERTIES OF TM/S, TM/MOS[X] (TM = AG, FE, ZN, CO AND NI) ON MO(110) AND O, RUO[X] ON RU(001)||Authors:||LI SI-YI||Issue Date:||1998||Citation:||LI SI-YI (1998). H-ATOM INTERACTION AND ELECTRONIC PROPERTIES OF TM/S, TM/MOS[X] (TM = AG, FE, ZN, CO AND NI) ON MO(110) AND O, RUO[X] ON RU(001). ScholarBank@NUS Repository.||Abstract:||The chemical and electronic properties of a series of TM/Smultilayer/Mo( 110) (TM = Ag, Fe, Zn, Co, and Ni), and TM/MoSX systems (TM = Ag, Zn, Co and Ni) have been investigated using XPS, X-AES, TDS, hydrogen (H2, D2, or D) chemisorption and molecular orbital calculations. Sulfur films on a well-defined metal surface have been prepared by means of a home-made sulfur doser under UHV conditions, and our UPS, TDS and IRAS results showed that such films consisted of Sn species, S2, S4 and S8, The successful preparation of sulfur film under UHV conditions will provide scientists with a good approach lo study sulfur in materials and catalysts. Sulfur films prepared under UHV conditions are very reactive towards adsorbed metal atoms. The deposition of metals TM (TM = Ag, Fe, Zn, Co, and Ni) onto sulfur films at the substrate temperatures of 200 - 300 K led to formation of metal sulfide (TMSX) films. Our studies showed that the presence or an admetal on sulfur films would promote Mo ? S interaction with the result or sulfidation of the substrate Mo(110) forming MoSX films. The admetals promoted the sulfidation of molybdenum by facilitating the migration or S from the surface into the Mo lattice. or by increasing the reactivity or Mo towards S through metal?metal interaction. The promotion effects, based on a per admetal atom, increased in the following sequence: Ag ? Fe< Zn ||URI: ||https://scholarbank.nus.edu.sg/handle/10635/175551
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