Please use this identifier to cite or link to this item:
Title: Raman spectroscopy of two-dimensional Bi2TexSe3-x platelets produced by solvothermal method
Authors: Yuan, J
Zhao, M 
Yu, W
Lu, Y
Chen, C
Xu, M
Li, S
Loh, K.P 
Bao, Q
Keywords: Chalcogenides
Crystal microstructure
Raman spectroscopy
Selenium compounds
Tellurium compounds
Bismuth chalcogenide
Crystal morphologies
Higher frequencies
Solvothermal method
Stoichiometric ratio
Ternary compounds
Topological insulators
Bismuth compounds
Issue Date: 2015
Publisher: MDPI AG
Citation: Yuan, J, Zhao, M, Yu, W, Lu, Y, Chen, C, Xu, M, Li, S, Loh, K.P, Bao, Q (2015). Raman spectroscopy of two-dimensional Bi2TexSe3-x platelets produced by solvothermal method. Materials 8 (8) : 5007-5017. ScholarBank@NUS Repository.
Abstract: In this paper, we report a facile solvothermal method to produce both binary and ternary compounds of bismuth chalcogenides in the form of Bi2TexSe3-x. The crystal morphology in terms of geometry and thickness as well as the stoichiometric ratio can be well controlled, which offers the opportunities to systematically investigate the relationship between microstructure and phonon scattering by Raman spectroscopy. Raman spectra of four compounds, i.e., Bi2Se3, Bi2Se2Te, Bi2SeTe2 and Bi2Te3, were collected at four different excitation photon energies (2.54, 2.41, 1.96, and 1.58 eV). It is found that the vibrational modes are shifted to higher frequency with more Se incorporation towards the replacement of Te. The dependence of Raman vibrational modes on excitation photon energy was investigated. As the excitation photon energy increases, three Raman vibrational modes (A1g1, Eg2 and A1g2) of the as-produced compounds move to low frequency. Three Infrared-active (IR-active) modes were observed in thin topological insulators (TIs) crystals. © 2015 by the authors.
Source Title: Materials
ISSN: 19961944
DOI: 10.3390/ma8085007
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_3390_ma8085007.pdf2.06 MBAdobe PDF




checked on Jan 12, 2021

Page view(s)

checked on Jan 15, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.