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https://doi.org/10.1088/1367-2630/16/11/115008
Title: | Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators | Authors: | Chou, B.-H Huang, Z.-Q Hsu, C.-H Chuang, F.-C Liu, Y.-T Lin, H Bansil, A |
Keywords: | Calculations Electric insulators Electronic structure Energy gap Hydrogenation Iodine Metallic films Quantum Hall effect Spin Hall effect Tin Ultrathin films First-principles calculation Quantum Spin hall effect TiN thin films Topological insulators Topological phase Thin films |
Issue Date: | 2014 | Publisher: | Institute of Physics Publishing | Citation: | Chou, B.-H, Huang, Z.-Q, Hsu, C.-H, Chuang, F.-C, Liu, Y.-T, Lin, H, Bansil, A (2014). Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators. New Journal of Physics 16 : 115008. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/16/11/115008 | Abstract: | Using thickness-dependent first-principles electronic structure calculations, we predict that hydrogenated ultra-thin films of tin harbor a new class of two-dimensional (2D) topological insulators (TIs). A single bilayer (BL) tin film assumes a 2D-TI phase, but it transforms into a trivial insulator after hydrogenation. In contrast, tin films with 2 and 3 BLs are found to be trivial insulators, but hydrogenation of 2 to 4 BL films results in a non-trivial TI phase. For 1 to 3 BLs, H-passivation converts the films from being metallic to insulating. Moreover, we examined iodine-terminated tin films up to 3 BLs, and found these to be non-trivial, with the films becoming semi-metallic beyond 1 BL. In particular, the large band gap of 340 meV in an iodine-terminated tin BL is not sustained in the iodine-terminated 2 BL and 3 BL tin films. © 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. | Source Title: | New Journal of Physics | URI: | https://scholarbank.nus.edu.sg/handle/10635/175300 | ISSN: | 1367-2630 | DOI: | 10.1088/1367-2630/16/11/115008 |
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