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dc.titleUltrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy
dc.contributor.authorLiu, H
dc.contributor.authorLu, J
dc.contributor.authorYang, Z
dc.contributor.authorTeng, J
dc.contributor.authorKe, L
dc.contributor.authorZhang, X
dc.contributor.authorTong, L
dc.contributor.authorSow, C.H
dc.identifier.citationLiu, H, Lu, J, Yang, Z, Teng, J, Ke, L, Zhang, X, Tong, L, Sow, C.H (2016). Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy. Scientific Reports 6 : 27387. ScholarBank@NUS Repository.
dc.description.abstractSuperiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.
dc.publisherNature Publishing Group
dc.sourceUnpaywall 20200831
dc.contributor.departmentDEPT OF PHYSICS
dc.description.sourcetitleScientific Reports
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