Please use this identifier to cite or link to this item: https://doi.org/10.1038/ncomms12066
Title: Chemical control over the energy-level alignment in a two-terminal junction
Authors: Yuan L.
Franco C.
Crivillers N.
Mas-Torrent M.
Cao L.
Sangeeth C.S.S.
Rovira C.
Veciana J.
Nijhuis C.A. 
Keywords: radical
self assembled monolayer
chemical process
chemical property
electrical property
electrode
energy
magnitude
molecular analysis
physics
radical
Article
chemical modification
control
electric current
electrode
energy
molecular electronics
room temperature
synthesis
temperature dependence
transistor
ultraviolet spectroscopy
X ray absorption spectroscopy
Issue Date: 2016
Publisher: Nature Publishing Group
Citation: Yuan L., Franco C., Crivillers N., Mas-Torrent M., Cao L., Sangeeth C.S.S., Rovira C., Veciana J., Nijhuis C.A. (2016). Chemical control over the energy-level alignment in a two-terminal junction. Nature Communications 7 : 12066. ScholarBank@NUS Repository. https://doi.org/10.1038/ncomms12066
Abstract: The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. Two-terminal molecular tunnelling junctions, however, lack a gate electrode and suffer from Fermi-level pinning, making it difficult to control the energy-level alignment of the system. Here we report an enhancement of 2 orders of magnitude of the tunnelling current in a two-terminal junction via chemical molecular orbital control, changing chemically the molecular component between a stable radical and its non-radical form without altering the supramolecular structure of the junction. Our findings demonstrate that the energy-level alignment in self-assembled monolayer-based junctions can be regulated by purely chemical modifications, which seems an attractive alternative to control the electrical properties of two-terminal junctions.
Source Title: Nature Communications
URI: https://scholarbank.nus.edu.sg/handle/10635/174945
ISSN: 20411723
DOI: 10.1038/ncomms12066
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