Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4929772
Title: Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
Authors: Ma, H.J.H
Zeng, S.W 
Annadi, A 
Huang, Z 
Venkatesan, T 
Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore 
Keywords: Carrier concentration
Electron gas
Electronic properties
Heterojunctions
Ionization of gases
Metal insulator boundaries
Perovskite
Phase interfaces
Tuning
Critical thickness
Electronic reconstruction
Interface engineering
Metal insulators
Multifunctional devices
Oxide interfaces
Perovskite oxides
Two-dimensional electron gas (2DEG)
Two dimensional electron gas
Issue Date: 2015
Citation: Ma, H.J.H, Zeng, S.W, Annadi, A, Huang, Z, Venkatesan, T, Ariando, NUSNNI-Nanocore, National University of Singapore117411, Singapore, Department of Physics, National University of Singapore117542, Singapore (2015). Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering. AIP Advances 5 (8) : 87171. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4929772
Abstract: The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO) and non-polar SrTiO3 (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides. © 2015 Author(s).
Source Title: AIP Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/174635
ISSN: 2158-3226
DOI: 10.1063/1.4929772
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