Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4953396
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dc.titleThickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers
dc.contributor.authorYang, Y
dc.contributor.authorXu, Y
dc.contributor.authorYao, K
dc.contributor.authorWu, Y
dc.date.accessioned2020-09-08T03:28:02Z
dc.date.available2020-09-08T03:28:02Z
dc.date.issued2016
dc.identifier.citationYang, Y, Xu, Y, Yao, K, Wu, Y (2016). Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers. AIP Advances 6 (6) : 65203. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4953396
dc.identifier.issn2158-3226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174625
dc.description.abstractWe investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, spin diffusion length of Pt and the real part of spin mixing conductance were determined to be 0.2, 1.1 nm, and 5.5 × 1014 Ω-1m-2, respectively. The results corroborate the spin orbit torque effect observed in this system recently. © 2016 Author(s).
dc.sourceUnpaywall 20200831
dc.subjectBinary alloys
dc.subjectHeavy metals
dc.subjectIron alloys
dc.subjectMagnetoresistance
dc.subjectManganese alloys
dc.subjectPlatinum
dc.subjectAntiferromagnets
dc.subjectBilayer systems
dc.subjectFeMn thin films
dc.subjectHall magnetoresistance
dc.subjectNon-monotonic dependence
dc.subjectSpin-accumulations
dc.subjectSpin-diffusion length
dc.subjectThickness dependence
dc.subjectPlatinum alloys
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1063/1.4953396
dc.description.sourcetitleAIP Advances
dc.description.volume6
dc.description.issue6
dc.description.page65203
dc.published.statePublished
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