Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-017-01583-4
Title: Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques
Authors: Wang, Y 
Zhu, D 
Wu, Y 
Yang, Y 
Yu, J 
Ramaswamy, R
Mishra, R 
Shi, S 
Elyasi, M 
Teo, K.-L 
Wu, Y 
Yang, H 
Keywords: ferromagnetic material
heavy metal
innovation
magnetization
momentum
temperature effect
topology
torque
acceleration
anisotropy
Article
atomic force microscopy
current density
insulator element
room temperature
scintiscanning
surface property
torque
Issue Date: 2017
Publisher: Nature Publishing Group
Citation: Wang, Y, Zhu, D, Wu, Y, Yang, Y, Yu, J, Ramaswamy, R, Mishra, R, Shi, S, Elyasi, M, Teo, K.-L, Wu, Y, Yang, H (2017). Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques. Nature Communications 8 (1) : 1364. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-017-01583-4
Abstract: Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1-1.75 in the thin Bi2Se3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, ~6 × 105 A cm-2, which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in topological insulator-based spintronic applications. © 2017 The Author(s).
Source Title: Nature Communications
URI: https://scholarbank.nus.edu.sg/handle/10635/174390
ISSN: 2041-1723
DOI: 10.1038/s41467-017-01583-4
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