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Title: Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
Authors: Liu D.
Chen X.
Hu Y.
Sun T.
Song Z.
Zheng Y. 
Cao Y.
Cai Z.
Cao M.
Peng L.
Huang Y. 
Du L.
Yang W.
Chen G.
Wei D.
Wee A.T.S. 
Wei D.
Keywords: graphene
quantum dot
chemical analysis
chemical compound
Raman spectroscopy
particle size
Raman spectrometry
sensitivity analysis
surface property
Issue Date: 2018
Publisher: Nature Publishing Group
Citation: Liu D., Chen X., Hu Y., Sun T., Song Z., Zheng Y., Cao Y., Cai Z., Cao M., Peng L., Huang Y., Du L., Yang W., Chen G., Wei D., Wee A.T.S., Wei D. (2018). Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition. Nature Communications 9 (1) : 193. ScholarBank@NUS Repository.
Abstract: Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10-9 mol L-1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics. © 2018 The Author(s).
Source Title: Nature Communications
ISSN: 2041-1723
DOI: 10.1038/s41467-017-02627-5
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