Please use this identifier to cite or link to this item:
|Title:||Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition||Authors:||Liu D.
|Issue Date:||2018||Publisher:||Nature Publishing Group||Citation:||Liu D., Chen X., Hu Y., Sun T., Song Z., Zheng Y., Cao Y., Cai Z., Cao M., Peng L., Huang Y., Du L., Yang W., Chen G., Wei D., Wee A.T.S., Wei D. (2018). Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition. Nature Communications 9 (1) : 193. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-017-02627-5||Abstract:||Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10-9 mol L-1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics. © 2018 The Author(s).||Source Title:||Nature Communications||URI:||https://scholarbank.nus.edu.sg/handle/10635/174348||ISSN:||2041-1723||DOI:||10.1038/s41467-017-02627-5|
|Appears in Collections:||Elements|
Show full item record
Files in This Item:
|10_1038_s41467-017-02627-5.pdf||2.8 MB||Adobe PDF|
checked on Mar 3, 2021
checked on Mar 5, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.