Please use this identifier to cite or link to this item: https://doi.org/10.1088/1742-6596/739/1/012014
Title: Towards molecular doping effect on the electronic properties of two-dimensional layered materials
Authors: Arramel 
Wang Q. 
Zheng Y. 
Zhang W. 
Wee A.T.S. 
Keywords: Chemical vapor deposition
Electronic properties
Energy gap
Energy harvesting
Microelectronics
Monolayers
Optical properties
Semiconductor doping
Transition metals
Bandgap transition
Electronic and optical properties
Growth parameters
Hetero-interfaces
Layered material
Transition metal dichalcogenides
Two Dimensional (2 D)
Wide-ranging applications
Graphene
Issue Date: 2016
Citation: Arramel, Wang Q., Zheng Y., Zhang W., Wee A.T.S. (2016). Towards molecular doping effect on the electronic properties of two-dimensional layered materials. Journal of Physics: Conference Series 739 (1) : 12014. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/739/1/012014
Abstract: In recent advancements of an atomically-thick, flat, and flexible two-dimensional (2D) material has attracted tremendous interest. Graphene and 2D layered semiconductors such as transition-metal dichalcogenides (TMDs) pave the way on the exploration of their unique layer-number dependent electronic and optical properties. The latter have a promising future on the microelectronics due to their sizeable bandgaps, i.e., the crossover from indirect-direct bandgap transition occurs as the thickness of TMDs is decreased to a monolayer. In this work, we systematically investigated the optimum growth parameter of chemical vapor deposition of MoS2 and WSe2, respectively. It turns out that the temperature and the duration growth plays role to produce a large area of TMDs monolayers. Our studies suggest that a well-controlled high quality of TMDs could serves as template and interlayer in the TMD-organic heterointerfaces. Thus it is potentially an attractive approach towards a wide-ranging application in optoelectronics, nanoelectronics and energy-harvesting applications.
Source Title: Journal of Physics: Conference Series
URI: https://scholarbank.nus.edu.sg/handle/10635/173818
ISSN: 17426588
DOI: 10.1088/1742-6596/739/1/012014
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