Please use this identifier to cite or link to this item: https://doi.org/10.1117/1.JMM.16.3.034501
Title: Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Authors: Ashraf, M 
Sundararajan, S.V 
Grenci, G 
Keywords: Aspect ratio
Etching
Inductively coupled plasma
Ions
Lithography
Molds
Photoresists
Silicon oxides
Elastomeric materials
Etching process
Mechano-biology
Pattern transfers
Silicon etching
Silicon substrates
Soft-lithographic techniques
Vertical profile
Reactive ion etching
Issue Date: 2017
Citation: Ashraf, M, Sundararajan, S.V, Grenci, G (2017). Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application. Journal of Micro/ Nanolithography, MEMS, and MOEMS 16 (3) : 34501. ScholarBank@NUS Repository. https://doi.org/10.1117/1.JMM.16.3.034501
Abstract: We report our findings in developing a low-power etching recipe using a newly acquired reactive-ion etching (RIE) tool (RIE-10NR, Samco, Japan), with the aim of achieving smooth and vertical sidewalls in micropatterned silicon substrate. We used a combination of CF4, SF6, and O2 gases, which at low power (30 W) and low pressure (2 Pa) allowed for vertical silicon etching (aspect ratio ?2). We used photoresist and silicon oxide as the etching masks. As it is a continuous etching process, scalloping effects were not present, which is contrary to the process done with an inductively coupled plasma-based "Bosch" approach. We also show a successful use of these microstructures as master mold in soft-lithographic techniques for producing devices in elastomeric materials that have applications in mechanobiology. To the best of our knowledge, the recipe we present here has the lowest combination of power and pressure for etching silicon with vertical profile using a standard, parallel plates RIE tool. © 2017 The Authors.
Source Title: Journal of Micro/ Nanolithography, MEMS, and MOEMS
URI: https://scholarbank.nus.edu.sg/handle/10635/173783
ISSN: 19325150
DOI: 10.1117/1.JMM.16.3.034501
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