THEORETICAL STUDY OF DEVICE PERFOMANCE AND PHYSICS BASED ON TWO-DIMENIONAL (2D) MATERIAL

Abstract

The continuous dimension scaling of the Si based MOSFET faces the challenges of performance degradation induced by both short channel effect and increasing power consumption. To overcome both challenges, two-dimensional (2D) materials are proposed as new channel materials to suppress the short channel effect, while the negative capacitance FETs are proposed for the purpose of power-scaling. Despite the intense research interests on these two topics in recent years, it is still important to understand both the device physics and the impact of material properties on the device performance. Therefore, in this thesis, the theoretical investigation of the device physics in 2D material FETs are introduced, while NCFET devices are also investigated with advanced FE materials modeling. The results not only demonstrate the performance limit and the impact of the unique 2D material properties on device physics, but also outline the design strategy and key factors for next-generation devices.