Please use this identifier to cite or link to this item: https://doi.org/10.1002/qute.201900123
Title: Toward Valley‐Coupled Spin Qubits
Authors: Goh Kuan Eng, Johnson 
Bussolotti, Fabio
Lau, Chit Siong
Kotekar-Patil, Dharmraj
Zi En, Ooi
Jing Yee, Chee
Keywords: Quantum information,
Qubits
Valleytronics
Quantum dots
Transition metal dichalcogenides
Issue Date: 13-May-2020
Citation: Goh Kuan Eng, Johnson, Bussolotti, Fabio, Lau, Chit Siong, Kotekar-Patil, Dharmraj, Zi En, Ooi, Jing Yee, Chee (2020-05-13). Toward Valley‐Coupled Spin Qubits. Advanced Quantum Technologies 3 (6). ScholarBank@NUS Repository. https://doi.org/10.1002/qute.201900123
Abstract: The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits.
Source Title: Advanced Quantum Technologies
URI: https://scholarbank.nus.edu.sg/handle/10635/172433
ISSN: 25119044
DOI: 10.1002/qute.201900123
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