NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/172123

DC Field	Value
dc.title	NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS
dc.contributor.author	LEE KIN MAN
dc.date.accessioned	2020-08-07T09:22:12Z
dc.date.available	2020-08-07T09:22:12Z
dc.date.issued	1995
dc.identifier.citation	LEE KIN MAN (1995). NUMERICAL AND EXPERIMENTAL STUDIES OF BACKGATING IN HIGH ELECTRON MOBILITY TRANSISTORS. ScholarBank@NUS Repository.
dc.identifier.uri	https://scholarbank.nus.edu.sg/handle/10635/172123
dc.source	CCK BATCHLOAD 20200814
dc.type	Thesis
dc.contributor.department	ELECTRICAL ENGINEERING
dc.contributor.supervisor	L. S. TAN
dc.contributor.supervisor	S. C. CHOO
dc.contributor.supervisor	W. S. LAU
dc.description.degree	Master's
dc.description.degreeconferred	MASTER OF ENGINEERING
Appears in Collections:	Master's Theses (Restricted)

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