Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solener.2019.07.055
Title: Development of nanoparticle copper screen printing pastes for silicon heterojunction solar cells
Authors: Teo, Boon Heng 
Khanna, Ankit 
Shanmugam, Vinodh 
Aguilar, Ma Luisa Ortega 
Delos Santos, Maryknol Estrada 
Chua, Darius Jin Wen
Chang, Wei-Chen
Mueller, Thomas 
Keywords: Science & Technology
Technology
Energy & Fuels
Low temperature curing
Screen printing
Cu nanoparticles
Silicon heterojunction
Solar cells
LIGHT-INDUCED DEGRADATION
CONVERSION EFFICIENCY
BUSBARS
MASKING
Issue Date: 1-Sep-2019
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: Teo, Boon Heng, Khanna, Ankit, Shanmugam, Vinodh, Aguilar, Ma Luisa Ortega, Delos Santos, Maryknol Estrada, Chua, Darius Jin Wen, Chang, Wei-Chen, Mueller, Thomas (2019-09-01). Development of nanoparticle copper screen printing pastes for silicon heterojunction solar cells. SOLAR ENERGY 189 : 179-185. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solener.2019.07.055
Abstract: © 2019 International Solar Energy Society This paper reports the development of copper screen printing pastes for silicon heterojunction solar cells. Nanoparticle copper paste formulations with a varying amount of copper (percentage by weight) were evaluated in terms of printability, line resistance, and contact formation to Indium-Tin Oxide (ITO) transparent conductive oxide layers. The screen-printed Cu samples were cured under vacuum conditions (<300 ppm O2) at temperatures between 200 °C and 400 °C for 30 min. Scanning electron microscopy was used to investigate Cu nanoparticle sintering at the microstructural level and determine optimal curing conditions for the pastes. The optimized Cu paste formulation yielded consistent finger widths between 53 and 60 μm and finger heights above 20 μm. The average specific contact resistivity of the Cu-ITO contact for the best-performing paste formulation under optimal curing conditions was 0.4 mΩ·cm2. The resistivity of printed Cu lines after curing at 400 °C for 30 min was 27 μΩ·cm. In terms of printability and contact resistance to ITO, the paste formulations developed in this study are suitable for application to silicon heterojunction cells. Steps to further improve the resistivity of the printed Cu lines are discussed. Insights from this study revealed the critical influence of Cu paste composition, rheology, screen printing parameters, and curing conditions on the properties of printed electrodes.
Source Title: SOLAR ENERGY
URI: https://scholarbank.nus.edu.sg/handle/10635/170996
ISSN: 0038-092X
1471-1257
DOI: 10.1016/j.solener.2019.07.055
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