Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/170923
Title: Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
Authors: Leong, Wei Sun 
Luo, Xin 
Li, Yida 
Khoo, Khoong Hong 
Quek, Su Ying 
Thong, John TL 
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Chemistry
Science & Technology - Other Topics
Materials Science
Transition metal dichalcogenide
Molybdenum disulfide
Contact resistance graphene
Field-effect transistor
Heterostructure
FIELD-EFFECT TRANSISTORS
Issue Date: 27-Jan-2015
Publisher: American Chemical Society
Citation: Leong, Wei Sun, Luo, Xin, Li, Yida, Khoo, Khoong Hong, Quek, Su Ying, Thong, John TL (2015-01-27). Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes. ACS NANO 9 (1) : 869-877. ScholarBank@NUS Repository.
Abstract: © 2014 American Chemical Society. We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ω·μm. The substantial contact enhancement (∼2 orders of magnitude), as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way toward achieving high performance next-generation transistors.
Source Title: ACS NANO
URI: https://scholarbank.nus.edu.sg/handle/10635/170923
ISSN: 19360851
1936086X
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