Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168672
Title: Al-Doped Black Phosphorus p-n Homojunction Diode for High Performance Photovoltaic
Authors: Liu, Yuanda 
Cai, Yongqing 
Zhang, Gang 
Zhang, Yong-Wei 
Ang, Kah-Wee 
Keywords: Al-doping
black phosphorus
homojunctions
photovoltaics
Issue Date: 3-Jan-2017
Publisher: Wiley-VCH Verlag
Citation: Liu, Yuanda, Cai, Yongqing, Zhang, Gang, Zhang, Yong-Wei, Ang, Kah-Wee (2017-01-03). Al-Doped Black Phosphorus p-n Homojunction Diode for High Performance Photovoltaic. ADVANCED FUNCTIONAL MATERIALS 27 (7). ScholarBank@NUS Repository.
Abstract: 2D layered materials based p–n junctions are fundamental building block for enabling new functional device applications with high efficiency. However, due to the lack of controllable doping technique, state-of-the-art 2D p–n junctions are predominantly made of van der Waals heterostructures or electrostatic gated junctions. Here, the authors report the demonstration of a spatially controlled aluminum doping technique that enables a p–n homojunction diode to be realized within a single 2D black phosphorus nanosheet for high performance photovoltaic application. The diode achieves a near-unity ideality factor of 1.001 along with an on/off ratio of ?5.6 × 103 at a low bias of 2 V, allowing for low-power dynamic current rectification without signal decay or overshoot. When operated under a photovoltaic regime, the diode's dark current can be significantly suppressed. The presence of a built-in electric field additionally gives rise to temporal short-circuit current and open-circuit voltage under zero external bias, indicative of its enriched functionalities for self-powered photovoltaic and high signal-to-noise photodetection applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Source Title: ADVANCED FUNCTIONAL MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/168672
ISSN: 1616301X
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