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Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.0141808jss
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dc.titleThe effect of hydrogen doping on the electrochemical etching of ion/irradiated n/type silicon
dc.contributor.authorLiang, H.D.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorDuttagupta, S.
dc.contributor.authorAberle, A.G.
dc.contributor.authorBettiol, A.A.
dc.contributor.authorVenkatesan, T.
dc.date.accessioned2020-05-28T07:09:59Z
dc.date.available2020-05-28T07:09:59Z
dc.date.issued2018-04-01
dc.identifier.citationLiang, H.D., Breese, M.B.H., Duttagupta, S., Aberle, A.G., Bettiol, A.A., Venkatesan, T. (2018-04-01). The effect of hydrogen doping on the electrochemical etching of ion/irradiated n/type silicon. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 7 (8) : N110-N113. ScholarBank@NUS Repository. https://doi.org/10.1149/2.0141808jss
dc.identifier.issn21628769
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/168594
dc.description.abstractWe have developed a model to account for the effects of MeV proton irradiation and annealing on the doping profile of crystalline n-type silicon, and how this alters the formation of porous silicon during subsequent electrochemical anodization. Based on this model, we have developed a machining process using MeV proton irradiation. The hydrogen-doping during irradiation in n-type silicon allows selective modification of the doping profile only at the ion end-of-range. This allows formation of buried, hollow channels in porous silicon without any influence of the defect profile introduced above this region, which limits this process in p-type silicon. © 2018 The Electrochemical Society.
dc.publisherElectrochemical Society Inc.
dc.typeArticle
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentPHYSICS
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1149/2.0141808jss
dc.description.sourcetitleECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
dc.description.volume7
dc.description.issue8
dc.description.pageN110-N113
dc.grant.idNRF-CRP15-2015-01
dc.grant.fundingagencyNational Research Foundation
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