The effect of hydrogen doping on the electrochemical etching of ion/irradiated n/type silicon

Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.0141808jss

Title:	The effect of hydrogen doping on the electrochemical etching of ion/irradiated n/type silicon
Authors:	Liang, H.D. Breese, M.B.H. Duttagupta, S. Aberle, A.G. Bettiol, A.A. Venkatesan, T.
Issue Date:	1-Apr-2018
Publisher:	Electrochemical Society Inc.
Citation:	Liang, H.D., Breese, M.B.H., Duttagupta, S., Aberle, A.G., Bettiol, A.A., Venkatesan, T. (2018-04-01). The effect of hydrogen doping on the electrochemical etching of ion/irradiated n/type silicon. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 7 (8) : N110-N113. ScholarBank@NUS Repository. https://doi.org/10.1149/2.0141808jss
Abstract:	We have developed a model to account for the effects of MeV proton irradiation and annealing on the doping profile of crystalline n-type silicon, and how this alters the formation of porous silicon during subsequent electrochemical anodization. Based on this model, we have developed a machining process using MeV proton irradiation. The hydrogen-doping during irradiation in n-type silicon allows selective modification of the doping profile only at the ion end-of-range. This allows formation of buried, hollow channels in porous silicon without any influence of the defect profile introduced above this region, which limits this process in p-type silicon. © 2018 The Electrochemical Society.
Source Title:	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
URI:	https://scholarbank.nus.edu.sg/handle/10635/168594
ISSN:	21628769
DOI:	10.1149/2.0141808jss
Appears in Collections:	Staff Publications Elements

File	Description	Size	Format	Access Settings	Version
The effect of hydrogen doping on the electrochemical etching of ion irradiated n type silicon.pdf		810.2 kB	Adobe PDF	OPEN	None	View/Download

Check