Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168562
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dc.titleFerroic tunnel junctions and their application in neuromorphic networks
dc.contributor.authorGuo, Rui
dc.contributor.authorLin, Weinan
dc.contributor.authorYan, Xiaobing
dc.contributor.authorVenkatesan, T.
dc.contributor.authorChen, Jingsheng
dc.date.accessioned2020-05-28T01:57:51Z
dc.date.available2020-05-28T01:57:51Z
dc.date.issued2020-01-06
dc.identifier.citationGuo, Rui, Lin, Weinan, Yan, Xiaobing, Venkatesan, T., Chen, Jingsheng (2020-01-06). Ferroic tunnel junctions and their application in neuromorphic networks. APPLIED PHYSICS REVIEWS 7 (1). ScholarBank@NUS Repository.
dc.identifier.issn19319401
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/168562
dc.description.abstractBrain-inspired neuromorphic computing has been intensively studied due to its potential to address the inherent energy and throughput limitations of conventional Von-Neumann based computing architecture. Memristors are ideal building blocks for artificial synapses, which are the fundamental components of neuromorphic computing. In recent years, the emerging ferroic (ferroelectric and ferromagnetic) tunnel junctions have been shown to be able to function as memristors, which are potential candidates to emulate artificial synapses for neuromorphic computing. Here, we provide a review on the ferroic tunnel junctions and their applications as artificial synapses in neuromorphic networks. We focus on the development history of ferroic tunnel junctions, their physical conduction mechanisms, and the intrinsic dynamics of memristors. Their current applications in neuromorphic networks will also be discussed. Finally, a conclusion and future outlooks on the development of ferroic tunnel junctions will be given. Our goal is to give a broad review of ferroic tunnel junction based artificial synapses that can be applied to neuromorphic computing and to help further ongoing research in this field. © 2020 Author(s).
dc.publisherAmerican Institute of Physics Inc.
dc.typeReview
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentDEPT OF MATERIALS SCIENCE & ENGINEERING
dc.description.sourcetitleAPPLIED PHYSICS REVIEWS
dc.description.volume7
dc.description.issue1
dc.grant.idNRF-CRP15-2015-01
dc.grant.fundingagencyNational Research Foundation
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