Please use this identifier to cite or link to this item:
https://doi.org/10.1002/adfm.201906655
DC Field | Value | |
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dc.title | Correlated Lattice Instability and Emergent Charged Domain Walls at Oxide Heterointerfaces | |
dc.contributor.author | Li, Mengsha | |
dc.contributor.author | Huang, Zhen | |
dc.contributor.author | Tang, Chunhua | |
dc.contributor.author | Song, Dongsheng | |
dc.contributor.author | Mishra, Tara Prasad | |
dc.contributor.author | Ariando, Ariando | |
dc.contributor.author | Venkatesan, Thirumalai | |
dc.contributor.author | Li, Changjian | |
dc.contributor.author | Pennycook, Stephen J. | |
dc.date.accessioned | 2020-05-27T07:20:32Z | |
dc.date.available | 2020-05-27T07:20:32Z | |
dc.date.issued | 2019-09-26 | |
dc.identifier.citation | Li, Mengsha, Huang, Zhen, Tang, Chunhua, Song, Dongsheng, Mishra, Tara Prasad, Ariando, Ariando, Venkatesan, Thirumalai, Li, Changjian, Pennycook, Stephen J. (2019-09-26). Correlated Lattice Instability and Emergent Charged Domain Walls at Oxide Heterointerfaces. ADVANCED FUNCTIONAL MATERIALS 29 (49). ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.201906655 | |
dc.identifier.issn | 1616301X | |
dc.identifier.issn | 16163028 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/168503 | |
dc.description.abstract | Charged domain walls provide possibilities in effectively manipulating electrons at nanoscales for developing next-generation electronic devices. Here, using the atom-resolved imaging and spectroscopy on LaAlO3/SrTiO3//NdGaO3 heterostructures, the evolution of correlated lattice instability and charged domain walls is visualized crossing the conducting LaAlO3/SrTiO3 heterointerface. When increasing the SrTiO3 layer thickness to 20 unit cells and above, both LaAlO3 and SrTiO3 layers begin to exhibit measurable polar displacements to form a tail-to-tail charged domain wall at the LaAlO3/SrTiO3 interface, resulting in the charged redistribution within the 2-nm-thick SrTiO3 layer close to the LaAlO3/SrTiO3 interface. The mobile charges in different heterostructures can be estimated by summing up Ti3+ concentrations in the conducting channel, which is sandwiched by SrTiO3 layers with interdiffusion and/or oxygen octahedral rotations. Those estimated mobile charges are quantitatively consistent with results from Hall measurements. The results not only shed light on complex oxide heterointerfaces, but also pave a new path to nanoscale charge engineering. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | |
dc.publisher | Wiley-VCH Verlag | |
dc.subject | Charged domain walls | |
dc.subject | Correlated systems | |
dc.subject | Nanoscale charge engineering | |
dc.subject | Oxygen octahedral rotation | |
dc.subject | STEM-EELS | |
dc.type | Article | |
dc.contributor.department | DEPT OF ELECTRICAL & COMPUTER ENGG | |
dc.contributor.department | DEPT OF MATERIALS SCIENCE & ENGINEERING | |
dc.contributor.department | DEPT OF PHYSICS | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1002/adfm.201906655 | |
dc.description.sourcetitle | ADVANCED FUNCTIONAL MATERIALS | |
dc.description.volume | 29 | |
dc.description.issue | 49 | |
dc.published.state | Published | |
dc.grant.id | NRF-CRP15-2015-01 | |
dc.grant.fundingagency | National Research Foundation | |
Appears in Collections: | Staff Publications Elements |
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Correlated Lattice Instability and Emergent Charged Domain Walls at Oxide Heterointerfaces.pdf | 1.24 MB | Adobe PDF | OPEN | None | View/Download |
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