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https://doi.org/10.1038/s41565-020-0653-1
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dc.title | Charge disproportionate molecular redox for discrete memristive and memcapacitive switching | |
dc.contributor.author | Goswami, Sreetosh | |
dc.contributor.author | Rath, Santi P. | |
dc.contributor.author | Thompson, Damien | |
dc.contributor.author | Hedstrom, Svante | |
dc.contributor.author | Annamalai, Meenakshi | |
dc.contributor.author | Pramanick, Rajib | |
dc.contributor.author | Ilic, B. Robert | |
dc.contributor.author | Sarkar, Soumya | |
dc.contributor.author | Hooda, Sonu | |
dc.contributor.author | Nijhuis, Christian A. | |
dc.contributor.author | Martin, Jens | |
dc.contributor.author | Williams, R. Stanley | |
dc.contributor.author | Goswami, Sreebrata | |
dc.contributor.author | Venkatesan, T. | |
dc.date.accessioned | 2020-05-27T07:20:24Z | |
dc.date.available | 2020-05-27T07:20:24Z | |
dc.date.issued | 2020-03-23 | |
dc.identifier.citation | Goswami, Sreetosh, Rath, Santi P., Thompson, Damien, Hedstrom, Svante, Annamalai, Meenakshi, Pramanick, Rajib, Ilic, B. Robert, Sarkar, Soumya, Hooda, Sonu, Nijhuis, Christian A., Martin, Jens, Williams, R. Stanley, Goswami, Sreebrata, Venkatesan, T. (2020-03-23). Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. NATURE NANOTECHNOLOGY 15 (5) : 380-389. ScholarBank@NUS Repository. https://doi.org/10.1038/s41565-020-0653-1 | |
dc.identifier.issn | 17483387 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/168499 | |
dc.description.abstract | Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal–organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm2. Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete—a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing ‘continuous state’ memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing. © 2020, The Author(s), under exclusive licence to Springer Nature Limited. | |
dc.publisher | Nature Research | |
dc.type | Article | |
dc.contributor.department | DEPT OF CHEMISTRY | |
dc.contributor.department | DEPT OF ELECTRICAL & COMPUTER ENGG | |
dc.contributor.department | DEPT OF PHYSICS | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1038/s41565-020-0653-1 | |
dc.description.sourcetitle | NATURE NANOTECHNOLOGY | |
dc.description.volume | 15 | |
dc.description.issue | 5 | |
dc.description.page | 380-389 | |
dc.published.state | Published | |
dc.grant.id | NRF-CRP15-2015-01 | |
dc.grant.fundingagency | National Research Foundation | |
Appears in Collections: | Staff Publications Elements |
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