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|Title:||Charge disproportionate molecular redox for discrete memristive and memcapacitive switching||Authors:||Goswami, Sreetosh
Rath, Santi P.
Ilic, B. Robert
Nijhuis, Christian A.
Williams, R. Stanley
|Issue Date:||23-Mar-2020||Publisher:||Nature Research||Citation:||Goswami, Sreetosh, Rath, Santi P., Thompson, Damien, Hedstrom, Svante, Annamalai, Meenakshi, Pramanick, Rajib, Ilic, B. Robert, Sarkar, Soumya, Hooda, Sonu, Nijhuis, Christian A., Martin, Jens, Williams, R. Stanley, Goswami, Sreebrata, Venkatesan, T. (2020-03-23). Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. NATURE NANOTECHNOLOGY 15 (5) : 380-389. ScholarBank@NUS Repository. https://doi.org/10.1038/s41565-020-0653-1||Abstract:||Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal–organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm2. Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete—a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing ‘continuous state’ memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing. © 2020, The Author(s), under exclusive licence to Springer Nature Limited.||Source Title:||NATURE NANOTECHNOLOGY||URI:||https://scholarbank.nus.edu.sg/handle/10635/168499||ISSN:||17483387||DOI:||10.1038/s41565-020-0653-1|
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