Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSENS.2013.6688182
Title: Energy-Efficient MRAM Access Scheme Using Hybrid Circuits Based on Spin-Torque Sensors
Authors: Sharad, Mrigank
Venkatesan, Rangharajan
Fong, Xuanyao 
Raghunathan, Anand
Roy, Kaushik 
Keywords: Science & Technology
Technology
Engineering, Electrical & Electronic
Remote Sensing
Engineering
spintronic
magnets
memory
low power
circuit
interconnect
Issue Date: 1-Jan-2013
Publisher: IEEE
Citation: Sharad, Mrigank, Venkatesan, Rangharajan, Fong, Xuanyao, Raghunathan, Anand, Roy, Kaushik (2013-01-01). Energy-Efficient MRAM Access Scheme Using Hybrid Circuits Based on Spin-Torque Sensors. 12th IEEE Sensors Conference : 234-237. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSENS.2013.6688182
Abstract: Reducing the energy dissipation for on-chip memory access and the associated data transport is critical for emerging chip multiprocessors (CMP). STT-MRAM is a promising technology for future on-chip memories, owing to its attractive features like non-volatility, zero-leakage and high-density. In an MRAM, read-access and data-transport can dominate the energy-dissipation (owing to negligible leakage power and more frequent read as compared to write operations). We propose the application of nano-scale spin-torque switches for low energy MRAM access. Such spin torque switches can act as fast, compact and ultra-low voltage current-sensors that can be used to perform low-power read operations in MRAM. Such spin-torque sensors (STS) can also facilitate ultra-low voltage, current-mode data transport over global interconnects, thereby reducing the energy dissipation on data buses by more than 99%. Simulation results for 2-level MRAM-cache design using such a STS device shows the possibility of ∼90% reduction in memory access power as compared to conventional techniques. © 2013 IEEE.
Source Title: 12th IEEE Sensors Conference
URI: https://scholarbank.nus.edu.sg/handle/10635/156207
ISBN: 9781467346405
ISSN: 19300395
DOI: 10.1109/ICSENS.2013.6688182
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