Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMAG.2015.2422260
Title: Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
Authors: Seo, Yeongkyo
Fong, Xuanyao 
Kwon, Kon-Woo
Roy, Kaushik
Keywords: Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Spin electronics
differential memory
magnetic random-access memory
read/write ports
spin-Hall effect
spin-transfer torque
STT-MRAM
ARCHITECTURE
Issue Date: 1-Jan-2015
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik (2015-01-01). Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches. IEEE MAGNETICS LETTERS 6. ScholarBank@NUS Repository. https://doi.org/10.1109/LMAG.2015.2422260
Abstract: © 2015 IEEE. This paper proposes two types of dual-ported (1-read/1-write: 1R/1W) spin-Hall magnetic random-access memory (SH-MRAM) suitable for on-chip cache applications. Separate write and read ports allow simultaneous write and read access, which can mitigate the impact of slow write latency on the system performance without any area overhead compared to the single-ported SH-MRAM. The efficient spin-Hall effect based spin-transfer torque (STT) leads to low-power write operation. In addition, separate read and write current paths of the devices can enhance the read operation without much impact on the write operation. The differential sensing scheme in 1R/1W differential SH-MRAM can further improve sensing power and sensing margin. Compared to the 1R/1W STT-MRAM bit cell, the 1R/1W SH-MRAM bit cell can achieve lower power consumption for write operation and higher sensing margin with low read power consumption under an iso-area condition.
Source Title: IEEE MAGNETICS LETTERS
URI: https://scholarbank.nus.edu.sg/handle/10635/156187
ISSN: 1949-307X
1949-3088
DOI: 10.1109/LMAG.2015.2422260
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