Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2377721
Title: Multilevel Spin-Orbit Torque MRAMs
Authors: Kim, Yusung
Fong, Xuanyao 
Kwon, Kon-Woo
Chen, Mei-Chin
Roy, Kaushik
Keywords: Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Magnetic memory
multilevel cell (MLC)
spin-Hall effect (SHE)
spin-orbit torque (SOT)
spin-transfer torque (STT)
Issue Date: 1-Feb-2015
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Kim, Yusung, Fong, Xuanyao, Kwon, Kon-Woo, Chen, Mei-Chin, Roy, Kaushik (2015-02-01). Multilevel Spin-Orbit Torque MRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (2) : 561-568. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2377721
Abstract: © 2015 IEEE. In this paper, we present two multilevel spin-orbit torque magnetic random access memories (SOT-MRAMs). A single-level SOT-MRAM employs a three-terminal SOT device as a storage element with enhanced endurance, close-to-zero read disturbance, and low write energy. However, the three-terminal device requires the use of two access transistors per cell. To improve the integration density, we propose two multilevel cells (MLCs): 1) series SOT MLC and 2) parallel SOT MLC, both of which store two bits per memory cell. A detailed analysis of the bit-cell suggests that the S-MLC is promising for applications requiring both high density and low write-error rate, and P-MLC is particularly suitable for high-density and low-write-energy applications. We also performed iso-bit-cell area comparison of our MLC designs with previously proposed MLCs that are based on spin-transfer torque MRAM and show 3-16× improvement in write energy.
Source Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
URI: https://scholarbank.nus.edu.sg/handle/10635/156182
ISSN: 0018-9383
1557-9646
DOI: 10.1109/TED.2014.2377721
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