Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2018.11.011
Title: Ultra-thin atomic layer deposited aluminium oxide hole-selective contacts for silicon solar cells
Authors: Xin, Zheng 
Ling, Zhi Peng 
Wang, Puqun 
Ge, Jia 
Ke, Cangming 
Choi, Kwan Bum 
Aberle, Armin G 
Stangl, Rolf 
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Hole-selective contact
Atomic layer deposited
Ultra-thin aluminium oxide
Rear emitter silicon solar cell
TUNNELING CONTACTS
PASSIVATION
RESISTIVITY
POLYSILICON
Issue Date: 1-Mar-2019
Publisher: ELSEVIER SCIENCE BV
Citation: Xin, Zheng, Ling, Zhi Peng, Wang, Puqun, Ge, Jia, Ke, Cangming, Choi, Kwan Bum, Aberle, Armin G, Stangl, Rolf (2019-03-01). Ultra-thin atomic layer deposited aluminium oxide hole-selective contacts for silicon solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS 191 : 164-174. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2018.11.011
Abstract: © 2018 Elsevier B.V. In this work, we use ultra-thin thickness-controllable spatial atomic layer deposited (ALD) aluminium oxide (AlOx) tunnel layers, which contain high negative fixed charges (Qf), capped by highly boron-doped polysilicon layers to form tunnel layer passivated contacts. The high Qf of the tunnel layers is expected to enhance the carrier selectivity of these passivated hole-extracting contacts. The dependence of the ALD AlOx tunnel layer contact passivation performance on its thickness is investigated. Furthermore, two different thermal charge activation conditions, i.e., fast firing using a belt furnace at 700 and 800 °C are compared. The best measured recombination current density J0 and implied open-circuit voltage iVoc of the developed AlOx/polysilicon passivated contacts with a symmetrical AlOx/SiNx stack passivation are 6.6 fA/cm2 and 723 mV, respectively. Based on the measured J0 and on the measured total contact resistivity of the passivated contact, the practical efficiency limit of a rear-side full area passivated contact solar cell with a conventionally diffused front side is calculated to be as high as 23.2%. Additionally, three rear-side metallization schemes: (1) thermally evaporated full-area silver contacts; (2) screen-printed non-firing-through aluminium contacts and (3) screen-printed firing-through silver-aluminium contacts, are compared. Finally, rear-emitter solar cells, using a rear-side hole-selective AlOx tunnel layer passivated contact, are fabricated, which shows an efficiency of up to 20.5%. While the proposed hole-selective passivated contact scheme appears to be promising based on the simulation prediction, the efficiency of the fabricated cells is largely limited by the non-optimized front-side reflectance and recombination losses as well as the use of non-optimized rear-side metallization schemes.
Source Title: SOLAR ENERGY MATERIALS AND SOLAR CELLS
URI: https://scholarbank.nus.edu.sg/handle/10635/155268
ISSN: 0927-0248
1879-3398
DOI: 10.1016/j.solmat.2018.11.011
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